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| PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561)283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO -218 ABSOLUTE MAXIMUM RATING: Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Collector to Emitter Continuous Collector Current Peak Collector Current Power Dissipation TA = 25 C Power Dissipation TC = 25 C Storage Temperature Operating Temperature Lead Temperature From Case ELECTRICAL CHARACTERISTICS TA @ 25 C PARAMETERS SYMBOL TEST CONDITIONS Collector to Base Voltage BVCBO Emitter to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Collector to Emitter Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current D.C. Current Gain Pulsed* D.C. Current Gain Pulsed* D.C. Current Gain Pulsed* D.C. Current Gain Pulsed* D.C. Current Gain Pulsed* Saturation Voltage* Saturation Voltage* Saturation Voltage* Base Emitter Voltage* Base Emitter Voltage* Base Emitter Voltage* Base Emitter Voltage* BVEBO BVCEO(sus) BVCEO BVCEV ICER ICBO ICES ICEX ICEX I EBO h FE h FE hFE h FE h FE VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(sat) VBE(sat) IC = 5.0A IB = 1.0A IC = 10A IB = 4.0A IC = 5.0A IB = 1.0A TC =100C IC = 5.0A IB = 1.0A IC = 5.0A IB = 1.0A TC =100C 1.5 1.5 2.0 1.5 1.5 VCE = 1500V RBE = 50 TC = 100C 2.5 IC = 100mA TYPE: MJH16018 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR BVCBO BVCEV BVEBO BVCEO(sus) IC ICM PD PD Tstg TJ TL 1500 800 6.0 10 15 150 -55 to +150 -55 to +150 275 Vdc Vdc Vdc Vdc Adc Adc Watts Watts C C C MIN TYP MAX UNIT Vdc Vdc Vdc Vdc Vdc mA mA mA 800 VCE = 1500V VBE(OFF) = 1.5V VCE = 1500V VBE(OFF) = 1.5VTC =100C VEB = 6V IC = 5A VCE = 5V 7.0 250 1.5 100 A mA A Vdc Vdc Vdc Vdc Vdc Vdc Vdc VBE(on) Notes: *Pulse Width 300usec 2% Duty Cycle September 10, 2001 PT-1 Page 1 of 2 TYPE: MJH16018 SMALL SIGNAL CHARACTERISTICS Current Gain at F = Input Capacitance Output Capacitance VCB = 10V f = 1KHz Transition Frequency Input Impedance Voltage Feedback Ratio Output Admittance Noise Figure SWITCHING CHARACTERISTICS Resistive Load Storage Time Fall Time Delay Time Rise Time Storage Time Fall Time Inductive Load Storage Time Crossover Time Fall Time Storage Time Crossover Time Fall Time TJ = 25C IC = 5.0A IB1 = 1.0A VBE(OFF) = 2.0V VCE(pk) = 400V PW = 25s IC = 5.0A VCC = 250V IB1 = 1.0A IB2 = 2.0A RB2 = 3 PW = 25s DC = 2% IC = 5.0A VCC = 250V IB1 = 1.0A VBE(OFF) = 2.0V PW = 30s DC = 2% SYMBOL ts tf td tr ts tf SYMBOL tsv tc tfi tsv TJ = 100C tc tfi SYMBOL GPE Pout Pout IS/B RJC MIN TYP MIN TYP MIN TYP MAX NF SYMBOL h fe Cib Cob fT 450 MIN TYP MAX UNITS pf pf MHz Ohms X10-4 mhos dB 2400 650 100 400 3000 1200 MAX UNITS ns ns ns ns ns ns UNITS ns ns ns ns ns ns UNITS dB Watt % Watt A 3000 500 400 3600 620 460 MAX FUNCTIONAL TEST Common-Emitter Amplifier Power Gain Power Output Collector Efficiency Power Output Second Breakdown Collector Current Thermal-Resistance, Junction to Case 1.0 C/W September 10, 2001 PT-1 Page 2 of 2 |
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